Ferroelectric Fet

'FERROELECTRICS NEW RESEARCH '; 'FERROELECTRICS NEW RESEARCH '; 'CONTENTS '; 'PREFACE '; 'APPLICATION OF FERROELECTRICS: METAL FERROELECTRIC INSULATOR SEMICONDUCTOR FIELD EFFECT TRANSISTOR '; 'ABSTRACT '; '1. INTRODUCTION OF FERROELECTRIC FIELD EFFECT TRANSISTOR '; 'Retention '; 'Leakage Current '; 'Depolarization Field'; 'Disturbance '; '2. STUDY FOR FEFET '; '2.1. Improvement of Ferroelectric Materials for MFIS FeFET '; '2.1.1. Photochemical Metal-Organic Deposition (PMOD) '; '2.1.1.1. Application of PMOD to the Formation of PZT Thin Films' '2.1.1.2. Application of PMOD to the Formation of Bi3.25La0.75Ti3O12 Thin Films ''2.1.2. Electron Beam-Induced Metal-Organic Deposition (EMOD) '; '2.1.2.1. Ferroelectric Properties of Sub 50-nm Direct-Patterned Pb(Zr, Ti)O3 Thin Films '; '2.1.3. Composition Control in the Chemical Solution Process '; '2.1.3.1. The Effects of Solvent on the Properties of Sol-Gel Derived PZT Thin Films '; '2.1.4. The Effect of Film Thickness and Annealing Temperature '; '2.1.4.1. The Effects of Film Thickness of PZT on the Crystallization and Ferroelectric Properties ' '2.1.4.2. Substrate Modification for the Direct Formation of PZT Films with Perovskite Structure ''2.1.5. Element Substitution in Ferroelectric Materials '; '2.1.5.1. Ferroelectric Properties of La Substituted Bi4Ti3O12 Thin Films '; '2.1.5.2. Structural and Electrical Properties of Bi4-XNdxTi3O12 Thin Films '; '2.1.5.3. Development of Sol-Gel Precursor System for PZT Thin Films Containing Various La Contents '; '2.1.5.4. Electrical Properties of PLZT Thin Films with Various Zr/Ti Ratios ' '2.1.5.5. Synthesis and Characterization of Ferroelectric Properties of Ce2Ti2O7 Thin Films with Ce3+ ''2.1.6. Ferroelectric Multilayer Structure'; '2.1.6.1. Stacking Effect on the Ferroelectric Properties of PZT/PLZT Multilayer Thin Films '; '2.1.6.2. Electric and Ferroelectric Properties of PZT/BLT and PZT/SBT Multilayer Thin Films'; '2.1.6.3. Formation of Multilayer Thin Films of Nd2Ti2O7 and Bi3.25La0.75Ti3O12 For Applying to Ferroelectric Field Effect Transistor '; '2.2.6.4. Effect of SrTiO3 Buffer Layer on the Phase Formation and Properties of BiFeO3 Thin Films ' '2.2. Study on the Improvement of Retention Property in MFIS-FeFET ''2.3.1. Insulator Materials in MFIS for Retention Improvement of FeFET '; '2.2.2. Ferroelectric Materials in MFIS for Retention Improvement of FeFET '; 'CONCLUSION '; 'REFERENCES '; 'RESONANT AND NON-RESONANT MICROWAVE ABSORPTION STUDIES IN MULTIFERROIC MATERIALS '; 'ABSTRACT'; '1. INTRODUCTION '; '2. EXPERIMENTAL METHODS '; '2.1. Resonant Microwave Absorption Measurement (EPR Technique) '; '2.2. Non-Resonant Microwave Absorption Measurements (MAMMAS and LFMA) '; '3. MULTIFERROIC MATERIALS STUDIES '

FRAM Memory Tutorial Includes:
What is FRAM memoryFRAM operation & technology
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FRAM, ferroelectric RAM, is a form of random access memory that combines the fast read and write access of dynamic RAM, DRAM whilst also providing non-volatile capability.

FRAM, ferroelectric RAM, is a form of random access memory that combines the fast read and write access of dynamic RAM, DRAM whilst also providing non-volatile capability. Ferroelectric RAM is also known as F-RAM or FeRAM, as and it is able to compete with Flash technology in many areas, although there are several advantages and disadvantages. Ferroelectric Memories Scott Springer 874: Offers an introduction to the field of ferroelectric memories.

Ferroelectric RAM is also known as F-RAM or FeRAM, as and it is able to compete with Flash technology in many areas, although there are several advantages and disadvantages to using it.

Ferroelectric field effect transistor

While the name FRAM or ferroelectric RAM seems to indicate that an iron element exists within the memory this is not actually the case.

Ferroelectric RAM history

The development of FRAM dates back to the early days of semiconductor technology. The idea was first proposed in 1952, but it took many years before the idea started to be developed properly as the technologies required to implement it did not exist.

Some work on the technology was started in the 1980s, and then in the early 1990s a part of NASA undertook work into the technology for detecting UV radiation pulses.

However around 1999 the first devices were produced and since then companies including Ramtron, Fujitsu, Texas Instruments, Samsung, Matsushita, Infineon and other have been using the technology.

FRAM usage

Mac edit rdp file. Currently ferroelectric RAM is not as widely used as many of the more established technologies including DRAM and Flash. These technologies have become well entrenched and their use is widespread.

As developers often tend to rely on trusted technologies that are guaranteed to deliver the performance they require, they are often reluctant to use technologies like FRAM that are not guaranteed to deliver. Also issues like memory density that limit the size of memory available have caused them not to be so widely used.

However FRAM technology is now being embedded into chips using CMOS technology to enable MCUs to have their own FRAM memories. This requires fewer stages than the number required for incorporating Flash memory onto MCU chips, thereby providing some significant cost reductions.

Ferroelectric Fet In Memory Computing

A further advantage, apart from the non-volatile nature of the memory is its very low power consumption which lends itself admirably to use within MCUs where power consumption is often a key issue.

FRAM vs other memory technologies comparison

FRAM has characteristics that mean that it lends itself to many different uses. However it is useful to be able to compare the performance and parameters of FRAM with other established memory technologies.


Comparison of Memory technologies with FRAM
FRAM SRAM EEPROM Flash
Non-volatile Yes No Yes Yes
Write endurance 1 million billion (i.e. 1015) Unlimited ~500 000 1 000 000
Write speed (for 13 kB) 10ms <10ms 2s
Average active power (µA/MHz) 80 <60 Up to 10 mA 260
Dynamics bit addressable programmability Yes Yes No No

FRAM advantages and disadvantages

FRAM has a number of distinct advantages when compared to Flash memory which is its nearest competitor. These need to be balanced against what may be termed its disadvantages when considering its use in any system.

FRAM advantages compared to Flash

  • Lower power usage
  • Much larger number of write-erase cycles
  • Faster write performance

FRAM disadvantages compared to Flash

  • Lower storage density
  • Higher cost
  • Overall capacity limitation
Fet

Ferroelectric Fets-based Nonvolatile Logic-in-memory Circuits

FRAM is able to offer many advantages and can be used in many areas, but as in many cases, the use of FRAM memory is a balance of a number of characteristics and parameters which need to be made for any particular circuit design.

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