Mosfet Irfp260

Vishay Siliconix IRFP260 MOSFET. Power MOSFETIRFP260, SiHFP260Vishay SiliconixPRODUCT SUMMARYVDS (V) RDS (on) (Ω) Qg (Max.) (nC. STABL offers modular battery inverters/converters that render high-voltage battery packs unnecessary. The modular approach works with safer low-voltage battery modules instead and is fail-operational against battery malfunction. IRFP260 MOSFET N Channel Transistor Original IRF ₹88.00. Add to Cart Add to Wish List Compare this Product Quickview. P140NF75 - Mosfet 75V 120A N-Channel Original - P140NF.

  1. Mosfet Irfp260n
  2. Mosfet Irfp260n Pdf
  3. Irfp260n Mosfet Equivalent
  4. Mosfet Irfp260m
  5. Harga Mosfet Irfp260
  6. Mosfet Irfp260n

Type Designator: IRFP260

Type of Transistor: MOSFET

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Maximum Power Dissipation (Pd): 280 W

Maximum Drain-Source Voltage Vds : 200 V

Maximum Gate-Source Voltage Vgs : 20 V

Mosfet Irfp260n

Maximum Gate-Threshold Voltage Vgs(th) : 4 V

Maximum Drain Current Id : 46 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 230(max) nC

Rise Time (tr): 120 nS

Drain-Source Capacitance (Cd): 1200 pF

Maximum Drain-Source On-State Resistance (Rds): 0.055 Ohm

Mosfet Irfp260n Pdf

Package: TO247AC

IRFP260 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

Irfp260n Mosfet Equivalent

IRFP260 Datasheet (PDF)

0.1. auirfp2602.pdf Size:207K _international_rectifier

PD - 96420AUTOMOTIVE GRADEAUIRFP2602HEXFET Power MOSFETFeatures Advanced Process TechnologyDV(BR)DSS 24V Low On-Resistance 175C Operating Temperature RDS(on) typ. 1.25m Fast Switching max. 1.6m Repetitive Avalanche Allowed up to Tjmax G Lead-Free, RoHS CompliantID (Silicon Limited) 380A Automotive Qualified *SID (Package Limited) 180A Description

0.2. irfp260pbf.pdf Size:1340K _international_rectifier

Mosfet Irfp260

PD- 95915IRFP260PbF Lead-Free9/27/04Document Number: 91215 www.vishay.com1IRFP260PbFDocument Number: 91215 www.vishay.com2IRFP260PbFDocument Number: 91215 www.vishay.com3IRFP260PbFDocument Number: 91215 www.vishay.com4IRFP260PbFDocument Number: 91215 www.vishay.com5IRFP260PbFDocument Number: 91215 www.vishay.com6IRFP260PbFPeak Diode Recovery

0.3. irfp260.pdf Size:168K _international_rectifier

0.4. irfp260n.pdf Size:122K _international_rectifier

PD - 94004AIRFP260NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 200V Dynamic dv/dt Rating 175C Operating Temperature Fast SwitchingRDS(on) = 0.04G Fully Avalanche Rated Ease of ParallelingID = 50AS Simple Drive RequirementsDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extreme

Mosfet Irfp260m

0.5. irfp260npbf.pdf Size:180K _international_rectifier

PD - 95010AIRFP260NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 200Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.04l Fully Avalanche RatedGl Ease of ParallelingID = 50Al Simple Drive RequirementsSl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techni

0.6. irfp260mpbf.pdf Size:634K _international_rectifier

PD - 96293IRFP260MPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 200Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.04l Fully Avalanche RatedGl Ease of ParallelingID = 50Al Simple Drive RequirementsSl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniq

0.7. irfp260 sihfp260.pdf Size:1762K _vishay

IRFP260, SiHFP260Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.055RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 230COMPLIANT Fast SwitchingQgs (nC) 42 Ease of ParallelingQgd (nC) 110 Simple Drive RequirementsConfiguration Single Comp

0.8. irfp260.pdf Size:399K _inchange_semiconductor

iscN-Channel MOSFET Transistor IRFP260FEATURESLow drain-source on-resistance:RDS(ON) 55m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

0.9. irfp260m.pdf Size:247K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP260MIIRFP260MFEATURESStatic drain-source on-resistance:RDS(on)40mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Speed Power SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Dr

0.10. irfp260n.pdf Size:242K _inchange_semiconductor

Harga Mosfet Irfp260

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP260NIIRFP260NFEATURESStatic drain-source on-resistance:RDS(on)40mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingFully Avalanche RatedABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

Mosfet Irfp260n

0.11. irfp260npbf.pdf Size:212K _inchange_semiconductor

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFP260NPBFFEATURESWith TO-247 packagingEase of parallelingHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

Datasheet: IRFP250, IRFP250A, IRFP251, IRFP252, IRFP253, IRFP254, IRFP254A, IRFP255, BUZ11, IRFP264, IRFP330, IRFP331, IRFP332, IRFP333, IRFP340, IRFP340A, IRFP341.


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